Semiconductor memory device

ABSTRACT

Subarrays, which constitute a memory cell array, each include a bit line driving transistor having a drain connected to a bit line, a source is connected to an interconnection having a power supply potential, and a gate is connected to a sub-bit line. The plurality of memory cells are each provided in such away that a gate is connected to a word line, a source is grounded, and whether a drain is connected to the sub-bit line or not is selected in correspondence to data to be stored. Transmission transistors each have a gate connected to the bit line, a source connected to a loading transistor section, and a drain connected to the sub-bit line.

This is a divisional application of application Ser. No. 11/405,488filed Apr. 18, 2006, now U.S. Pat. No. 7,420,868, the entire contents ofwhich are incorporated by reference herein.

BACKGROUND

1. Field of the Invention

The present invention relates to a semiconductor memory device and moreparticularly to a memory cell array suitable to lower the thresholdvalues of memory cells through the use of low power supply voltage andthe microfabrication of a semiconductor memory device.

2. Description of the Related Art

Related art semiconductor memory devices include one disclosed in JP-ANo. 6-176592. The patent publication discloses a configuration of acontact-type mask ROM in paragraphs 0002 to 0006 of page 2 and FIG. 2.

FIG. 11 is a block diagram showing the configuration of a semiconductormemory device which represents the mask ROM described above. Thesemiconductor memory device shown in FIG. 11 comprises a memory cellarray 1, an address buffer 2, a row decoder 3, a column decoder 4, and aread circuit 5.

The memory cell array 1 is constituted by subarrays MS (i, j) (i=1 to mand j=1 to n) arranged in the form of a matrix. In the subarrays MS (i,j), the subarrays whose letters i's are represented by the same numeral,that is, the subarrays arranged in the same rows are connected to commonblock selection lines SLi (i=1 to m) and word lines WLk_i (k=1 to y andi=1 to m). Also, in the subarrays MS (i, j), the subarrays whose lettersj's are represented by the same numeral, that is, the subarrays arrangedin the same columns are connected to common bit lines MBLj (j=1 to n).

The address buffer 2 outputs address signals to the row decoder 3 andthe column decoder 4 according to an address input.

The row decoder 3, which receives the address signal outputted from theaddress buffer 2 as an input, is connected to the memory cell array 1via the block selection lines SLi (i=1 to m) and word lines WLk_i (k=1to y and i=1 to m). The row decoder 3 makes one of the block selectionlines SLi (i=1 to m) transition to a selected state and also makes oneof the word lines WLk_i (k=1 to y and i=1 to m) transition to a selectedstate according to the inputted address signal.

The column decoder 4, which receives the address signal outputted fromthe address buffer 2 as an input, is connected to the bit lines MBLj(j=1 to n) and the read circuit 5. The column decoder 4 selects one fromamong the bit lines MBLj (j=1 to n) according to the inputted addresssignal to bring a path between the selected bit line MBLj (j=1 to n) andthe read circuit 5 into conduction.

The read circuit 5 connected to the column decoder 4 has functions ofamplifying the signal sent from the bit line MBLj (j=1 to n) selected bythe column decoder 4 to output the amplified signal to the outside asdata, conducting precharge or discharge, and supplying an electriccharge in response to electric charge leakage.

FIG. 12 is a circuit diagram of a subarray included in the contact-typememory cell array described above of the mask ROM shown in FIG. 11. Theterm contact-type mask ROM means a ROM in which a state of connectingdrains of memory cells to sub-bit lines is brought into correspondencewith “0” of stored data and a state of not connecting them is broughtinto correspondence with “1” of the stored data.

The related art subarrays MS (i, j) (i=1 to m and j=1 to n) shown inFIG. 12 each comprises a N-type MOS transistor QNT and memory cells MNk(k=1 to y) each formed of a N-type MOS transistor.

In the N-type MOS transistor QNT, a gate is connected to the blockselection line SL, a drain is connected to the bit line MBL, and asource is connected to a sub-bit line SBL.

In the memory cells MNk (k=1 to y), gates are connected to the wordlines WLk (k=1 to y) and sources are connected to interconnectionshaving a ground potential. When stored data is “0”, the drains of thememory cells MNk (k=1 to y) are connected to the sub-bit line SBL andwhen the stored data is “1”, the sub-bit line SBL is brought to thefloating state.

Moreover, in the memory cell array 1 shown in FIG. 11, the blockselection line SL, the word lines WLk (k=1 to y) and the bit line MBLare connected to the corresponding block selection lines SLi (i=1 to m),word lines WLk_i (k=1 to y and i=1 to m), and bit lies MBLj (j=1 to n)of the subarrays MS (i, j) (i=1 to m and j=1 to n) respectively.

The operation of reading data from, for example, the memory cell MN1 ofthe subarray MS (1, 1) of the semiconductor memory device having such aconfiguration will be described with reference to a timing chart of FIG.13.

In response to an address input, a block selection signal SL1 is made totransition to a “H” level. Then the transistor QNT of the subarray MS(1, 1) is turned on and the bit line MBL1 and the read circuit 5 arebrought into conduction by the column decoder 4. Thereafter, the bitline MBL1 and the sub-bit line SBL of the subarray MS (1, 1) are chargedfor a fixed time period by using the precharge function of the readcircuit 5 to be made to transition to a “H” level, following which theword line WL1_1 is made to transition to the “H” level.

As a result, when the drain of the memory cell MN1 of the subarray MS(1, 1) is connected to the sub-bit line SBL, the charges supplied to thesub-bit line SBL and the line MBL1 are discharged by the memory cellMN1, thereby the sub-bit line SBL and the bit line MBL1 are pulled downto the “L” level.

When the drain of the memory cell MN1 is not connected to the sub-bitline SBL, the charges supplied to the sub-bit line SBL and the bit lineMBL1 are not discharged by the memory cell MN1 and hence, the sub-bitline SBL and the bit line MBL1 keep the “H” level.

As a consequence, when the drain of the memory cell MN1 is connected tothe sub-bit line SBL, the read circuit 5 outputs “L” level data to theoutside. In contrast, when the drain of the memory cell MN1 is notconnected to the sub-bit line SBL, the read circuit 5 outputs “H” leveldata to the outside.

According to such a related art, all the memory cells can be connectedto the corresponding bit lines by dividing the memory cells among thesubarrays instead of direct-connecting all memory cells arranged on asingle bit line to a bit line. Because of this, it becomes possible toconsiderably reduce drops in the levels of the bit lines resulting fromthe fact that after precharge, the electric charges are discharged dueto the occurrence of off-leakage currents from all the memory cellswhose gates are connected to the nonselected word lines and whose drainsare connected to the bit lines. Therefore, in microfabrication process,during which off-leakage currents increase, as well, a large-scalememory array can be realized.

Problems produced by such a related art semiconductor memory device areas described below. In the related art semiconductor memory device, thedrain and source of the block selecting transistor QNT, which is theN-type MOS transistor whose gate is connected to the block selectionline SL, are connected to the bit line MBLj (j=1 to n) and the sub-bitline SBL respectively instead of being grounded. Because of this, athreshold voltage is increased due to a substrate bias effect. Theinfluence of the threshold voltage increased due to the substrate biaseffect becomes great as a power supply voltage is decreased. As powerconsumption by portable equipment and so on including the semiconductormemory devices is reduced, power supply voltages for the semiconductormemory devices are lowered increasingly; however, the on resistance ofthe block selecting transistor QNT is increased considerably. On accountof this, when the bit line is pre-charged by the read circuit 5, ittakes time to charge the sub-bit line SBL and a charge time for the bitline BMLj (j=1 ton) lengthens. Likewise, when the electric chargesupplied to the bit line MBLj (j=1 to n) is discharged as well, thedischarge time lengthens due to the on resistance of the block selectingtransistor QNT. Therefore, it has become impossible to rapidly read datastored in the memory device.

In addition, the threshold voltage of the block selecting transistor QNTbecomes higher than that of the memory cells due to the substrate biaseffect. Because of this, a power supply voltage at which the transistorQNT is turned off becomes higher than that of the memory cells, whichhas become a big factor that raises the power supply voltage at whichthe semiconductor memory device can be operated. Therefore, such afactor has become a big problem in reading data from a semiconductormemory device at a lowered voltage.

For these reasons, a method for lowering only threshold voltages at partof transistors during their manufacture and a method for reducing onresistance and substrate bias effect by boosting gate voltages at partof transistors have been proposed in recent years.

However, to lower the threshold voltages during the manufacture, aspecial manufacturing process is required in addition to their ordinarymanufacturing process and to boost the gate voltages, there is a need toadd a booster circuit having a relatively large area and hence, theareas of the semiconductor memory devices are increased. Because ofthese, the both methods have a drawback in that the production cost ofthe semiconductor memory devices rises.

SUMMARY OF THE INVENTION

The present invention is made to solve such problems with the relatedart and hence, an object of the invention is to provide a semiconductormemory device in which subarrays can be formed without connecting drainsand sources of transistors, which are used for selectively connectingbit lines and sub-bit lines, to the bit lines and the sub-bit linesrespectively, time periods during which the bit lines are charged anddischarged can be shortened, and a read limit can be obtained at alowered voltage without undergoing the influence of a substrate biaseffect.

To solve the problems, the semiconductor memory device according to theinvention has a memory cell array which includes the plurality ofsubarrays arranged in the form of a matrix and a plurality of word linesand the plurality of bit lines connected to the subarrays respectively.The subarrays each include a bit line driving transistor which drivesthe bit line, the sub-bit line connected to the gate of the bit linedriving transistor, and a plurality of memory cell transistors whichdrive the sub-bit line according to signals from the word lines.

According to such a configuration, the bit line driving transistor isprovided to each subarray, the gate of the bit line driving transistoris connected to the sub-bit line, and the memory cell transistors aredriven by the sub-bit line, thereby the bit line can be charged anddischarged rapidly without undergoing the influence of the on resistanceof the selected transistors whose sources and drains are connected tothe bit lines and the sub-bit lines respectively described in thesection of the related art. And further, the read limit can also beobtained at the lowered voltage without undergoing the influence of thesubstrate bias effect.

In the semiconductor memory device according to the invention, it ispreferable that the bit line driving transistor have a drain connectedto the bit line and a source connected to a first power potential supplyline, the memory cell array further include a plurality of blockselection lines connected to the subarrays, and the individual subarraysfurther include a resetting transistor having a gate connected to theblock selection line, a source connected to the first power potentialsupply line, and a drain connected to the sub-bit line.

Instead of having the resetting transistors, the semiconductor memorydevice according to the invention may have the following configuration:the individual subarrays further include a loading transistor having agate connected to the bit line, a drain connected to the sub-bit line,and a source connected to the first power potential supply line.

According to such a configuration in which the loading transistors areprovided, the sub-bit lines are not brought to the floating state andthe potential of the sub-bit line does not fluctuate significantly byvirtue of interference from interconnections provided near the subarraysfrom which data is to be read. As a result, the degree of freedom in thearrangement of interconnections in the memory cell array heightens,which makes it possible to realize the semiconductor memory device whosearea is reduced.

Moreover, instead of having the resetting transistors, the semiconductormemory device according to the invention may have the followingconfiguration: the individual subarrays further include a transmissiontransistor, which has a gate connected to the bit line and a drainconnected to the sub-bit line, and a loading transistor or a loadingtransistor section which includes a series circuit constituted by pluralloading transistors whose gates are connected each other and which has aconfiguration where the gates is connected to the second power potentialsupply line, the outermost source is connected to the first powerpotential supply line, and the outermost drain is connected to thesource of the transmission transistor.

According to the configuration where the transmission transistors andthe loading transistor sections are provided, the sub-bit lines are notbrought to the floating state and the potential of the sub-bit linesdoes not fluctuate significantly by virtue of the interference from theinterconnections provided near the subarrays from which data is to beread. As a consequence, the degree of freedom in the arrangement of theinterconnections heightens, which makes it possible to produce thesemiconductor memory device whose area is reduced. And furthermore, whenthe lengths of the loading transistors are increased to decrease theirON-state currents as well, the load capacities of the bit lines are notincreased and therefore, a high-speed operation can be achieved.

The semiconductor memory device according to the invention may have aconfiguration where the single resetting transistor is provided to theplural subarrays, which receive input from the same block selectionline, as one common resetting transistor by connecting the drain of thecommon resetting transistor to the sub-bit lines of the subarrays.

According to this configuration, since the common resetting transistoris provided to the subarrays, it is possible to realize thesemiconductor memory device whose area is reduced.

Moreover, the semiconductor memory device according to the invention mayhave a configuration where the single loading transistor or the singleloading transistor section is provided to the plural subarrays as onecommon loading transistor or one common loading transistor section byconnecting the common loading transistor or the common loadingtransistor section to the individual sources of the transmissiontransistors of the subarrays.

According to this configuration, since the common loading transistor orthe common loading transistor section is provided to the subarrays, itis possible to realize the semiconductor memory device whose area isreduced.

And further, in such a configuration of the semiconductor memory deviceaccording to the invention, the memory cell transistors are eachprovided in such a way that, for example, the gate is connected to theword line, the source is connected to the second power potential supplyline, and the connection of the drain to the sub-bit line depends ondata to be stored.

Still further, in such a configuration of the semiconductor memorydevice according to the invention, the memory cell transistors are eachprovided in such a way that the gate is connected to the word line, thesource is connected to the second power potential supply line, the drainis connected to the sub-bit line, and a threshold value may vary incorrespondence to stored data.

As described above, according to the invention, by forming the subarrayswithout connecting the drains and sources of the block selectingtransistors, which selectively connect the bit lines and the sub-bitlines, to the bit lines and the sub-bit lines respectively, thesemiconductor memory device can be realized in which the read operationcan be performed at high speed and the read limit can be obtained at alowered voltage without undergoing the influence of the on resistance ofthe block selecting transistors and the substrate bias effect.

In addition, unlike the foregoing methods for lowering only thethreshold voltage at the part of the transistors during theirmanufacture and for reducing the on resistance and the substrate biaseffect by boosting the gate voltage at the part of the transistors, theinvention does not require a special manufacturing process adopted tolower the threshold voltage and a booster circuit having a large areaused to boost the gate voltage and hence, the semiconductor memorydevice whose increase in area and rise in production cost are suppressedcan be realized.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram of a configuration of a subarray included ina semiconductor memory device according to a first embodiment of thepresent invention;

FIG. 2 is a timing chart showing operation of the semiconductor memorydevice according to the first embodiment of the invention;

FIG. 3 is a circuit diagram of a configuration of a subarray included ina semiconductor memory device according to a second embodiment of theinvention;

FIG. 4 is a timing chart showing operation of the semiconductor memorydevice according to the second embodiment of the invention;

FIG. 5 is a circuit diagram of a configuration of a subarray included ina semiconductor memory device according to a third embodiment of theinvention;

FIG. 6 is a timing chart showing operation of the semiconductor memorydevice according to the third embodiment and a semiconductor memorydevice according to a fifth embodiment of the invention;

FIG. 7 is a circuit diagram of a configuration of a subarray included ina semiconductor memory device according to a fourth embodiment of theinvention;

FIG. 8 is a timing chart showing operation of the semiconductor memorydevice according to the fourth embodiment and a semiconductor memorydevice according to a sixth embodiment of the invention;

FIG. 9 is a circuit diagram of a configuration of a subarray included inthe semiconductor memory device according to the fifth embodiment of theinvention;

FIG. 10 is a circuit diagram of a configuration of a subarray includedin the semiconductor memory device according to the sixth embodiment ofthe invention;

FIG. 11 is a circuit diagram of a configuration of the semiconductormemory devices;

FIG. 12 is the circuit diagram of the configuration of the subarrayincluded in the conventional art semiconductor memory device; and

FIG. 13 is the timing chart for showing the operation of theconventional art semiconductor memory device.

DESCRIPTION OF THE EXEMPLARY EMBODIMENTS First Embodiment

FIG. 1 is a circuit diagram showing a subarray MS (i, j) (i=1 to m andj=1 to n) which is included in the memory cell array 1 of asemiconductor memory device according to a first embodiment of thepresent invention (see FIG. 11).

The subarray MS (i, j) (i=1 to m and j=1 to n) shown in FIG. 1 comprisesa bit line driving transistor QND which is a N-type MOS transistor,memory cells MPk (k=1 to y) each comprised of a P-type MOS transistor,and a sub-bit line resetting transistor QNR which is a N-type MOStransistor.

In the bit line driving transistor QND, a gate is connected to a sub-bitline SBL, a drain is connected to a bit line MBL, and a source isconnected to an interconnection having a ground potential.

In the memory cells MPk (k=1 to y) which drive the sub-bit line SBL,each gate is connected to a word line WLk (k=1 to y) and each source isconnected to an interconnection having a power supply potential. Whenstored data is “0”, the drains of the memory cells MPk (k=1 to y) areconnected to the sub-bit line SBL and when the stored data is “1”, thesub-bit line SBL are brought to the floating state.

In the sub-bit line resetting transistor QNR, a gate is connected to ablock selection line SL, a drain is connected to the sub-bit line SBL,and a source is connected to the interconnection having the groundpotential.

Moreover, in the memory cell array 1 shown in FIG. 11, the blockselection line SL, the word lines WLk (k=1 to y), and the bit line MBLare connected to corresponding block selection lines SLi (i=1 to m),word lines WLk_i (k=1 to y and i=1 to m), and bit lines MBLj (j=1 to n)of the subarrays MS (i, j) (i=1 to m and j=1 to n) respectively.

The operation of reading data from, for example, the memory cell MP1 ofthe subarray MS (1, 1) included in the semiconductor memory devicehaving such a configuration will be described with reference to a timingchart of FIG. 2.

In response to an address input, a block selection signal SL1 is made totransition to a “L” level, the sub-bit line resetting transistor QNR ofthe subarray MS (1, 1) is turned off, and the bit line MBL1 and a readcircuit 5 are brought into conduction by a column decoder 4. Thereafter,through the use of the precharge function of the read circuit 5, the bitline MBL1 is charged for a fixed time period to make it to transition toa “H” level, following which the word line WL1_1 is made to transitionto the “L” level.

Because of this, when the drain of the memory cell MP1 included in thesubarray MS (1, 1) is connected to the sub-bit line SBL, the sub-bitline SBL is charged by the memory cell MP1 to be pulled up to the “H”level. As a result, the bit line driving transistor QND, which receivesinput from the sub-bit line SBL at its gate, is turned on and anelectric charge supplied to the bit line MBL1 is discharged by the bitline driving transistor QND, thereby the bit line MBL1 is pulled down tothe “L” level.

When the drain of the memory cell MP1 is not connected to the sub-bitline SBL, the sub-bit line SBL is at the “L” level without being chargedby the memory cell MP1. On account of this, the bit line drivingtransistor QND is in an off state and the bit line MBL1 keeps the “H”level without the discharge of the electric charge supplied to the bitline MBL1.

As a consequence, when the drain of the memory cell MP1 is connected tothe sub-bit line SBL, the read circuit 5 outputs “L” level data to theoutside and when the drain of the memory cell MP1 is not connected tothe sub-bit line SBL, the read circuit 5 outputs “H” level data to theoutside.

As described above, according to the first embodiment, the subarrays canbe formed without providing transistors which connect the bit lines MBLj(j=1 to n) and the sub-bit lines SBL of the subarrays MS (i, j) (i=1 tom and j=1 to n). Because of this, the influence of a substrate biaseffect is eliminated in contrast to the conventional art semiconductormemory device, a high-speed operation can be realized even at a lowpower supply voltage, and then a read limit can also be obtained at alower voltage.

In this embodiment, the bit line resetting transistor QNR is provided toeach subarray; however, the number of the transistors constituting thememory cell array 1 can be reduced by providing one common bit lineresetting transistor QNR to the plural subarrays connected to the sameblock selection line SLi (i=1 to m), thereby the effect of reducing thearea of the semiconductor memory device can be obtained.

Incidentally, in the first embodiment, the state of connecting thedrains of the memory cells and the sub-bit lines and the state of notconnecting them are brought into correspondence with “0” and “1” of datarespectively; in a mask ROM a state in which the threshold value ofmemory cells is low or a state in which it is high is brought intocorrespondence with “0” or “1” of data by connecting the drains of allthe memory cells to sub-bit lines as well, the same effect can beobtained.

Second Embodiment

FIG. 3 is a circuit diagram showing a subarray MS (i, j) (i=1 to m andj=1 to n) which is included in the memory cell array 1 of asemiconductor memory device according to a second embodiment of theinvention (see FIG. 11).

The subarray MS (i, j) (i=1 to m and j=1 to n) shown in FIG. 3 comprisesa bit line driving transistor QPD which is a P-type MOS transistor,memory cells MNk (k=1 to y) each comprised of a N-type MOS transistor,and a bit line resetting transistor QPR which is a P-type MOStransistor.

In the bit line driving transistor QPD, a gate is connected to a sub-bitline SBL, a drain is connected to a bit line MBL, and a source isconnected to an interconnection having a power supply potential.

In the memory cells MNk (k=1 to y) which drive the sub-bit line SBL,gates are connected to word lines WLk (k=1 to y) and sources areconnected to an interconnection having a ground potential. When storeddata is “1”, the drains of the memory cells MNk (k=1 to y) are connectedto the sub-bit line SBL and when the stored data is “0”, the sub-bitline SBL is brought to a floating state.

In the bit line resetting transistor QPR, a gate is connected to a blockselection line SL, a drain is connected to the sub-bit line SBL, and asource is connected to the interconnection having the power supplypotential.

Moreover, in the memory cell array 1 shown in FIG. 11, the blockselection line SL, the word lines WLk (k=1 to y), and the bit line MBLare connected with corresponding block selection lines SLi (i=1 to m),word lines WLk_i (k=1 to y and i=1 to m), and bit lines MBLj (j=1 to n)of other corresponding subarrays MS (i, j) (i=1 to m and j=1 to n)respectively.

The operation of reading data from, for example, the memory cell MN1 ofthe subarray MS (1, 1) included in the semiconductor memory devicehaving such a configuration will be described with reference to a timingchart of FIG. 4.

In response to an address input, a block selection signal SL1 is made totransition to a “H” level, the bit line resetting transistor QPR of thesubarray MS (1, 1) is turned off, and the bit line MBL1 and the readcircuit 5 are brought into conduction by the column decoder 4.Thereafter, the bit line MBL1 is discharged for a fixed time period byusing the discharge function of the read circuit 5 to be pulled down tothe “L” level, following which the word line WL1_1 is made to transitionto the “H” level.

Because of this, when the drain of the memory cell MN1 of the subarrayMS (1, 1) is connected the sub-bit line SBL, the line SBL is dischargedby the memory cell MN1 to be pulled down to the “L” level. As a result,the bit line driving transistor QPD, which receives input sent from thesub-bit line SBL at its gate, is turned on and the bit line MBL1 ischarged to be pulled up to the “H” level.

When the drain of the memory cell MN1 is not connected to the sub-bitline SBL, the line SBL is at the “H” level without being discharged bythe memory cell MN1. On account of this, the bit line driving transistorQPD is turned off and the bit line MBL1 is pulled down to the “L” levelwithout being charged.

As a consequence, when the drain of the memory cell MN1 is connected tothe sub-bit line SBL, the read circuit 5 outputs “H” level data to theoutside and when the drain of the memory cell MN1 is not connected tothe sub-bit line SBL, the read circuit 5 outputs “L” level data to theoutside.

As described above, according to the second embodiment, it becomespossible to realize a high-speed operation at a low power supply voltageand obtain a read limit at a low voltage as in the case of the firstembodiment, thereby the same effect as that described in the firstembodiment can be obtained.

In this embodiment, the bit line resetting transistor QPR is provided toeach subarray; however, the number of the transistors constituting thememory cell array 1 can be reduced by providing one common bit lineresetting transistor QNR to the plural subarrays connected to the sameblock selection line SLi (i=1 to m), thereby the effect of reducing thearea of the semiconductor memory device can be obtained.

Incidentally, in a mask ROM where a state in which the threshold valueof memory cells is low or a state in which it is high is brought intocorrespondence with “1” or “0” of data by connecting the drains of allthe memory cells to sub-bit lines as in the case of the first embodimentas well, the same effect can be obtained.

Third Embodiment

FIG. 5 is a circuit diagram of a subarray MS (i, j) (i=1 to m and j=1 ton) which is included in the memory cell array 1 of a semiconductormemory device according to a third embodiment of the invention (see FIG.11).

The subarray MS (i, j) (i=1 to m and j=1 to n) shown in FIG. 5 comprisesa bit line driving transistor QND which is a N-type MOS transistor,memory cells MPk (k=1 to y) each comprised of a P-type MOS transistor, aloading transistor QNL which is a N-type MOS transistor.

In the bit line driving transistor QND, a gate is connected to a sub-bitline SBL, a drain is connected to a bit line MBL, and a source isconnected to an interconnection having a ground potential.

In the memory cells MPk (k=1 to y) which drive the sub-bit line SBL,gates are connected to word lines WLk (k=1 to y) and sources areconnected to an interconnection having a power supply potential. Whenstored data is “0”, the drains of the memory cells MPk (k=1 to y) areconnected to the sub-bit line SBL and when the stored data is “1”, thesub-bit line SBL is brought to the floating state.

In the loading transistor QNL, a gate is connected to the bit line MBL,a drain is connected to the sub-bit line SBL, and a source is connectedto the interconnection having the ground potential. In this case, theON-state current of the loading transistor QNL is set so as to becomesmaller than the ON-state current of the memory cells MPK (k=1 to y).

Moreover, in the memory cell array 1 shown in FIG. 11, the word linesWLk (k=1 to y) and the bit line MBL are connected to corresponding wordlines WLk_i (k=1 to y and i=1 to m) and bit lines MBLj (j=1 to n) of thesubarrays MS (i, j) (i=1 to m and j=1 to n) respectively.

In the memory cell array 1, the block selection lines SLi (i=1 to m) areconnected to the block selection lines SL of the subarrays MS (i, j)(i=1 to m and j=1 to n) respectively; in the third embodiment, the blockselection lines SLi cannot be used as signal lines without beingconnected to the transistors in the subarrays MS (i, j) (i=1 to m andj=1 to n).

The operation of reading data from, for example, the memory cell MP1 ofthe subarray MS (1, 1) of the semiconductor memory device having such aconfiguration will be described with reference to a timing chart of FIG.6.

In response to an address input, the bit line MBL1 and the read circuit5 are brought into conduction by the column decoder 4, the bit line MBL1is charged for a fixed time period by using the precharge function ofthe read circuit 5 to make the bit line MBL1 to transition to the “H”level, and the loading transistor QNL is turned on. As a consequence,the sub-bit line SBL is made to transition to the “L” level, followingwhich the word line WL1_1 is made to transition to the “L” level.

Because of this, when the drain of the memory cell MP1 of the subarrayMS (1, 1) is connected to the sub-bit line SBL, the sub-bit line SBLtransitions to the “H” level and the bit line driving transistor QND isturned on. As a result, the charge supplied to the bit line MBL1 isdischarged by the transistor QND, so that the bit line MBL1 transitionsto the “L” level. At the time, the loading transistor QNL is turned offand the sub-bit line SBL is brought to the state of charge at all timeswithout being brought to the floating state by the on-state memory cellMP1.

When the drain of the memory cell MP1 is not connected to the sub-bitline SBL, the line SBL is at the “L” level without being charged by thememory cell MP1. On account of this, the bit line driving transistor QNDis in the off state and the bit line MBL1 is pulled up to the “H” levelbecause the charge supplied to the bit line MBL1 is not discharged bythe transistor QND. At this time, the sub-bit line SBL is brought to thestate of discharge at all times without being brought to a floatingstate temporarily because the loading transistor QNL is in the on state.

As a result, when the drain of the memory cell MP1 is connected to thesub-bit line SBL, the read circuit 5 outputs “L” level data to theoutside and when the drain of the memory cell MP1 is not connected tothe sub-bit line SBL, the read circuit 5 outputs “H” level data to theoutside.

As described above, according to the third embodiment, it becomespossible to achieve a high-speed operation at a low power supply voltageand obtain a read limit at a low voltage as in the case of the firstembodiment and it is possible to obtain the same effect as thatdescribed in the first embodiment.

In addition, since there is no time period during which the sub-bitlines are brought to the floating state at the time of read, the sub-bitlines are at the “H” or “L” level at all times. Because of this, thepotential of the sub-bit lines does not fluctuate significantly byvirtue of interference from the interconnections provided near thesubarrays from which data is to be read, which makes the degree offreedom in the interconnections in the memory cell array high, therebythe area of the semiconductor memory device can be reduced.

Fourth Embodiment

FIG. 7 is a circuit diagram of a subarray MS (i, j) (i=1 to m and j=1 ton) which is included in the memory cell array 1 of a semiconductormemory device according to a fourth embodiment of the invention (seeFIG. 11).

The subarray MS (i, j) (i=1 to m and j=1 to n) shown in FIG. 7 comprisesa bit line driving transistor QPD which is a P-type MOS transistor,memory cells MNk (k=1 to y) each comprised of a N-type MOS transistor,and a loading transistor QPL which is a P-type MOS transistor.

In the bit line driving transistor QPD, a gate is connected to thesub-bit line SBL, a drain is connected to the bit line MBL, and a sourceis connected to the interconnection having the power supply potential.

In the memory cells MNk (k=1 to y) which drive the sub-bit line SBL,gates are connected to the word lines WLk (k=1 to y) and sources areconnected to the interconnection having the ground potential. Whenstored data is “1”, the drains of the memory cells MNk (k=1 to y) areconnected to the sub-bit line SBL and when the stored data is “0”, thesub-bit line SBL is brought to the floating state.

In the loading transistor QPL, a gate is connected to the bit line MBL,a drain is connected to the sub-bit line SBL, and a source is connectedto the interconnection having the power supply potential. In this case,the ON-state current of the loading transistor QPL is set so as tobecome smaller than the ON-state current of the memory cells MNk (k=1 toy).

Moreover, in the memory cell array 1 shown in FIG. 11, the word linesWLk (k=1 to y) and the bit line MBL are connected to corresponding wordlines WLk_i (k=1 to y and i=1 to m) and bit lines MBLj (j=1 to n) of thesubarrays MS (i, j) (i=1 to m and j=1 to n) respectively.

In the memory cell array 1, the block selection lines SLi (i=1 to m) areconnected to the block selection lines SL of the subarrays MS (i, j)(i=1 to m and j=1 to n) respectively; in this embodiment, the blockselection lines cannot be used as signal lines without being connectedto the transistors in the subarrays MS (i, j) (i=1 to m and j=1 to n).

The operation of reading data from, for example, the memory cell MN1 ofthe subarray MS (1, 1) of the semiconductor memory device having such aconfiguration will be described with reference to a timing chart of FIG.8.

In response to an address input, the bit line MBL1 and the read circuit5 are brought into conduction by the column decoder 4, the bit line MBL1is discharged for a fixed time period by using the discharge function ofthe read circuit 5 to be made to transition to the “L” level, and theloading transistor QPL is turned on. As a result of this, the sub-bitline SBL is made to transition to the “H” level, following which theword line WL1_1 is made to transition to the “H” level.

Because of this, when the drain of the memory cell MN1 of the subarrayMS (1, 1) is connected to the sub-bit line SBL, the line SBL transitionsto the “L” level. As a consequence, the bit line driving transistor QPDis turned on and the bit line MBL1 is charged to transition to the “H”level. At this time, the loading transistor QPL is turned off and thesub-bit line SBL is brought to the state of discharge at all times bythe on-state memory cell MN1 without being brought to the floatingstate.

When the drain of the memory cell MN1 is not connected to the sub-bitline SBL, the line SBL is at the “H” level without being discharged bythe memory cell MN1. On account of this, the bit line driving transistorQPD is in the off state and the bit line MBL1 is kept at the “L” levelwithout being charged. At this time, the sub-bit line SBL is brought tothe state of charge at all times without being brought to the floatingstate temporarily because the loading transistor QPL is turned on.

As a result, when the drain of the memory cell MN1 is connected to thesub-bit line SBL, the read circuit 5 outputs “H” level data to theoutside and when the drain of the memory cell MN1 is not connected tothe sub-bit line SBL, the read circuit 5 outputs “L” level data to theoutside.

As described above, according to the fourth embodiment, it becomespossible to achieve a high-speed operation at a low power supply voltageand obtain a read limit at a low voltage as in the case of the firstembodiment, and then it is possible to obtain the same effect as thatdescribed in the first embodiment.

Moreover, since there is no time period during which the sub-bit linesare brought to the floating state at the time of the read as in the caseof the third embodiment, the sub-bit lines are at the “H” or “L” levelat all times. Because of this, the potential of the sub-bit lines doesnot fluctuate significantly by virtue of interference from theinterconnections provided near the subarrays from which data is to beread, which makes the degree of freedom in the interconnections in thememory cell array high, thereby the area of the semiconductor memorydevice can be reduced.

Incidentally, in a mask ROM where a state in which the threshold valuesof the memory cells are low or a state in which they are high is broughtinto correspondence with “1” or “0” of data by connecting the drains ofall the memory cells to the sub-bit lines as in the case of the firstembodiment as well, the same effect can be obtained.

Fifth Embodiment

FIG. 9 is a circuit diagram of a subarray MS (i, j) (i=1 to m and j=1 ton) which is included in the memory cell array 1 of a semiconductormemory device according to a fifth embodiment of the invention (see FIG.11).

The subarray MS (i, j) (i=1 to m and j=1 to n) shown in FIG. 9 comprisesa bit line driving transistor QND which is a N-type MOS transistor,memory cells MPk (k=1 to y) each comprised of a P-type MOS transistor, atransmission transistor QNF which is a N-type MOS transistor, and aloading transistor section NLOAD comprised of N-type MOS transistorsQNL1 (i=1 to z).

In the bit line driving transistor QND, a gate is connected to thesub-bit line SBL, a drain is connected to the bit line MBL, and a sourceis connected to the interconnection having the ground potential.

In the memory cells MPk (k=1 to y) which drive the sub-bit line SBL,gates are connected to the word lines WLk (k=1 to y), and sources areconnected to the interconnection having the power supply potential. Whenstored data is “0”, the drains of the memory cells MPk (k=1 to y) areconnected to the sub-bit line SBL and when the stored data is “1”, thesub-bit line SBL is brought to the floating state.

In the transmission transistor QNF, a gate is connected to the bit lineMBL, a drain is connected to the sub-bit line SBL, and a source isconnected to the loading transistor section NLOAD.

In the loading transistor section NLOAD, gates of the transistors QNL1(l=1 to z) are connected to the interconnection having the power supplypotential, sources are connected in series to drains of the nexttransistors QNL1, the drain of the transistor QNl1 positioned at one endof the section NLOAD is connected to the source of the transmissiontransistor QNF, and the source of the transistor QNLz positioned at theother end is connected to the interconnection having the groundpotential.

In this case, a current, which flows between the drain of the transistorQNL1 and the source of the transistor QNLz in the loading transistorsection NLOAD, is set so as to become smaller than the ON-state currentof the memory cells MPk (k=1 to y).

Moreover, in the memory cell array 1 shown in FIG. 11, the word linesWLk (k=1 to y) and the bit line BL are connected to corresponding wordlines WLk_i (k=1 to y and i=1 to m) and bit lines MBLj (j=1 to n) of thesubarrays MS (i, j) (i=1 to m and j=1 to n) respectively.

In the memory cell array 1, the block selection lines SLi (i=1 to m) areconnected to the block selection lines SL of the subarrays MS (i, j)(i=1 to m and j=1 to n) respectively; in the fifth embodiment, the blockselection lines SLi cannot be used as signal lines without beingconnected to the transistors in the subarrays MS (i, j) (i=1 to m andj=1 to n).

As in the case of the third embodiment, the operation of reading datafrom, for example, the memory cell MP1 of the subarray MS (1, 1) of thesemiconductor memory device having such a configuration will bedescribed with reference to the timing chart of FIG. 6.

In response to an address input, the bit line MBL1 and the read circuit5 are brought into conduction by the column decoder 4, the bit line MBL1is charged for a fixed time period by using the precharge function ofthe read circuit 5 to be made to transition to the “H” level, and thetransmission transistor QNF is turned on. As a result of this, thesub-bit line SBL is made to transition to the “L” level, following whichthe word line WL1_1 is made to transition to the “L” level.

Because of this, when the drain of the memory cell MP1 of the subarrayMS (1, 1) is connected to the sub-bit line SBL, the line SBL transitionsto the “H” level. As a consequence, the bit line driving transistor QNDis turned on and the charge supplied to the bit line MBL1 is dischargedby the bit line driving transistor QND, so that the bit line MBL1transitions to the “L” level. At this time, the transmission transistorQNF is turned off and the sub-bit line SBL is brought to the state ofcharge at all times by the on-state memory cell MP1 without beingbrought to the floating state.

When the drain of the memory cell MP1 is not connected to the sub-bitline SBL, the line SBL is at the “L” level without being charged by thememory cell MP1. On account of this, the bit line driving transistor QNDis in the off state, so that the bit line MBL1 is pulled up to the “H”level because a charge supplied to the bit line MBL1 is not dischargedby the transistor QND. At this time, the transmission transistor QNF isturned on, thereby the sub-bit line SBL is brought to the state ofdischarge at all times without being brought to the floating statetemporarily.

As a result, when the drain of the memory cell MP1 is connected to thesub-bit line SBL, the read circuit 5 outputs “L” level data to theoutside and when the drain of the memory cell MP1 is not connected tothe sub-bit line SBL, the read circuit 5 outputs “H” level data to theoutside.

As described above, according to the fifth embodiment, it becomespossible to achieve a high-speed operation at a low power supply voltageand obtain a read limit at a low voltage as in the case of the firstembodiment, and then it is possible to obtain the same effect as thatdescribed in the first embodiment. Besides, as in the case of the thirdembodiment, there is no time period during which the sub-bit lines arebrought to the floating state at the time of read and the area of thesemiconductor memory device can be reduced.

Furthermore, in this embodiment, since the transistors constituting theloading transistor sections are not direct-connected to the bit lineseven when the gate lengths of the transistors in the loading transistorsections are increased to make the ON-state currents of the loadingtransistor sections smaller than the ON-state currents of the memorycells, a high-speed operation can be achieved without increasing theload capacities of the bit lines.

Moreover, in the fifth embodiment, the loading transistor sections areconstituted by the plural loading transistors connected in series oneafter the other, while even when the loading transistor sections areeach made up of a single loading transistor whose ON-state current issmaller than that of the memory cells, the same effect can be obtained.

Incidentally, in a mask ROM where a state in which the threshold valuesof the memory cells are low or a state in which they are high is broughtinto correspondence with “0” or “1” of data by connecting all the drainsof the memory cells to the sub-bit lines as in the case of the firstembodiment as well, the same effect can be obtained.

Sixth Embodiment

FIG. 10 is a circuit diagram of a subarray MS (i, j) (i=1 to m and j=1to n) which is included in the memory cell array 1 of a semiconductormemory device according to a sixth embodiment of the invention (see FIG.11).

The subarray MS (i, j) (i=1 to m and j=1 to n) shown in FIG. 10comprises a bit line driving transistor QPD which is a P-type MOStransistor, memory cells MNk (k=1 to y) each comprised of a N-type MOStransistor, a transmission transistor QPF which is a P-type MOStransistor, and a loading transistor section PLOAD comprised of P-typeMOS transistors QPL1 (l=1 to z).

In the bit line driving transistor QPD, a gate is connected to thesub-bit line SBL, a drain is connected to the bit line MBL, and a sourceis connected to the interconnection having the power supply potential.

In the memory cells MNk (k=1 to y) which drive the sub-bit line SBL,gates are connected to the word lines WLk (k=1 to y) and sources areconnected to the interconnection having the ground potential. Whenstored data is “1”, the drains of the memory cells MNk (k=1 to y) areconnected to the sub-bit line SBL and when stored data is “0”, thesub-bit line SBL is brought to the floating state.

In the transmission transistor QPF, a gate is connected to the bit lineMBL, a drain is connected to the sub-bit line SBL, and a source isconnected to the loading transistor section PLOAD.

In the loading transistor section PLOAD, gates of the transistors QPL1(l=1 to z) are connected to the interconnection having the power supplypotential, sources are connected in series with drains of the nexttransistors QPL1, the drain of the transistor QPL1 positioned at one endof the loading transistor section PLOAD is connected to the source ofthe transmission transistor QNF, and the source of the transistor QNLzpositioned at the other end is connected to the interconnection havingthe power supply potential.

In this case, a current which flows between the source of the transistorQPLz and the drain of the transistor QPL1 in the loading transistorsection PLOAD is set so as to become smaller than the ON-state currentsof the memory cells MNk (k=1 to y).

Moreover, in the memory cell array 1 shown in FIG. 11, the word linesWLk (k=1 to y) and the bit line BL are connected to corresponding wordlines WLk_i (k=1 to y and i=1 to m) and bit lines MBLj (j=1 to n) of thesubarrays MS (i, j) (i=1 to m and j=1 to n) respectively. In the memorycell array 1, the block selection lines SLi (i=1 to m) are connected tothe block selection lines SL of the subarrays MS (i, j) (i=1 to m andj=1 to n) respectively; in the sixth embodiment, the block selectionlines SLi cannot be used as signal lines without being connected to thetransistors in the subarrays MS (i, j) (i=1 to m and j=1 to n).

As in the case of the fourth embodiment, the operation of reading datafrom, for example, the memory cell MP1 of the subarray MS (1, 1) of thesemiconductor memory device having such a configuration will bedescribed with reference to the timing chart of FIG. 8.

In response to an address input, the bit line MBL1 and the read circuit5 are brought into conduction by the column decoder 4, the bit line MBL1is discharged for a fixed time period by using the precharge function ofthe read circuit 5 to be made to transition to the “L” level, and thetransmission transistor QPF is turned on. As a result, the sub-bit lineSBL is made to transition to the “H” level, following which the wordline WL1_1 is made to transition to the “H” level.

Therefore, when the drain of the memory cell MN1 in the subarray MS(1, 1) is connected to the sub-bit line SBL, the line SBL transitions tothe “L” level. As a consequence, the bit line driving transistor QPD isturned on and the bit line MBL1 is charged by the bit line drivingtransistor QPD to transition to the “H” level. At this time, thetransmission transistor QPF is turned off and the sub-bit line SBL isbrought to the state of discharge at all times by the on-state memorycell MN1 without being brought to the floating state.

When the drain of the memory cell MN1 is not connected to the sub-bitline SBL, the line SBL is at the “H” level without being discharged bythe memory cell MN1. Because of this, the bit line driving transistorQPD is in the off state and the bit line MBL1 is pulled down to the “L”level without being charged by the transistor QPD. At this time, thesub-bit line SBL is brought to the state of charge at all times withoutbeing brought to the floating state temporarily because the transmissiontransistor QPF is turned on.

As a result, when the drain of the memory cell MN1 is connected to thesub-bit line SBL, the read circuit 5 outputs “H” level data to theoutside and when the drain of the memory cell MN1 is not connected tothe sub-bit line SBL, the read circuit 5 outputs “L” level data to theoutside.

As described above, according to the sixth embodiment, it becomespossible to achieve a high-speed operation at a low power supply voltageand obtain a read limit at a low voltage as in the case of the firstembodiment and it is possible to obtain the same effect as thatdescribed in the first embodiment. Besides, as in the case of the fourthembodiment, there is no time period during which the sub-bit lines arebrought to the floating state at the time of read and it becomespossible to manufacture the semiconductor memory device having a reducedarea.

Moreover, in this embodiment, since the transistors constituting theloading transistor sections are not direct-connected to the bit lineseven when the gate lengths of the transistors in the loading transistorsections are increased to make the ON-state currents of the loadingtransistor sections smaller than those of the memory cells, a high-speedoperation can be achieved without increasing the load capacities of thebit lines.

Furthermore, in the sixth embodiment, the loading transistor sectionsare constituted by the plural loading transistors connected in seriesone after the other, while even when the loading transistor sections areeach made up of a single loading transistor whose ON-state current issmaller than that of the memory cells, the same effect can be obtained.

Incidentally, in a mask ROM where a state in which the threshold valuesof the memory cells are low or a state in which they are high is broughtinto correspondence with “0” or “1” of data by connecting all the drainsof the memory cells to the sub-bit lines as in the case of the firstembodiment as well, the same effect can be obtained.

INDUSTRIAL APPLICABILITY

The semiconductor memory device according to the present invention has aconfiguration in which transistors, which are used for selectivelyconnecting bit lines and sub-bit lines, are provided in such a way thatsources are connected to interconnections having a power supplypotential or a ground potential, drains are connected to the bit lines,and gates are connected to the sub-bit lines instead of connecting thedrains and the sources to the bit lines and the sub-bit linesrespectively; therefore the semiconductor memory device is useful as aproduct embodying a technique for manufacturing the circuit in whichdata are read from the memory cells at high speed in a low-voltagerange, in which the influence of the threshold value increased by thesubstrate bias effect becomes significant, and the read limit is set ata lower voltage.

1. A semiconductor memory device comprising: a memory cell array whichincludes a plurality of subarrays arranged in the form of a matrix, anda plurality of word lines and a plurality of bit lines connected to thesubarrays, the subarray comprising a bit line driving transistor whichdrives the bit line, a sub-bit line connected to the gate of the bitline driving transistor, and a plurality of memory cell transistorswhich are connected to the sub-bit line and drive the sub-bit lineaccording to signals from the word lines, wherein: the bit line drivingtransistor has a drain connected to the bit line and a source connectedto a first power potential supply line, and the subarray furtherincludes a loading transistor having a gate connected to the bit line, adrain connected the sub-bit line, and a source connected to the firstpower potential supply line.
 2. The semiconductor memory deviceaccording to claim 1, wherein the memory cell transistors are eachprovided in such a way that the gate is connected to the word line, thesource is connected to a second power potential supply line, and theconnection of the drain to the sub-bit line depends on data to bestored.
 3. The semiconductor memory device according to claim 2, whereinthe memory cell transistors are each provided in such a way that thegate is connected to the word lines, the source is connected to thesecond power potential supply line, the drain is connected to the subbit line, and the threshold value varies in correspondence to storeddata.